Abstract
Growth of high-quality a-plane (11–20) GaN using a double-lens structure (DLS) on r-plane sapphire is reported. The DLS consisted of a hemispherically patterned SiO2 mask formed on an a-GaN template grown on a hemispherically patterned r-plane sapphire substrate. Our study suggests that the DLS was very effective in improving the crystal quality and optical properties in a-plane GaN growth on r-plane sapphire substrate owing to decreased defects and enhanced light extraction.
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