High Quality 100 mm 4H-SiC Substrate

Abstract

High-quality 100 mm 4H-SiC boules were grown using the physical vapor transport (PVT) method with optimized growth parameters. Micro-Raman spectroscopy measurement shows that the 4H-SiC polytype of the entire wafer is uniform. The micropipe density is measured to be less than 1cm-2. The 1c threading screw dislocation (TSD) density can be suppressed to the magnitude of 102 cm-2. After chemical mechanical polishing (CMP), it is found that the warp of the substrate is less than 10 μm, and the surface roughness (Ra) is as low as 0.063 nm.