Abstract

Fano resonance with high Q-factor based on all-dielectric metasurface is of great significance for the design of optical refractive index sensor. Herein, we proposed an all-dielectric metasurface structure based on silicon, which is composed of two circular holes and one hexagonal hole. The substrate is silica. Two schemes are put forward to achieve asymmetry structure: changing the radius of a circular hole and changing the circular hole into an elliptical hole. Both schemes can generate quasi-BIC mode. The transmission spectrum is calculated by finite difference time domain (FDTD) simulation software, and the maximum Q-factor can exceed 24000. Finally, the extremely narrow linewidth of Fano resonance is utilized to design the optical refractive index sensors, yielding the sensitivity of 273nm / RIU and figure of merit (FOM) of 2730.

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