Abstract
We present the design and experimental measurement of tellurium oxide-clad silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to a propagation loss of 0.42 dB/cm at wavelengths around 1550 nm. This compares to a propagation loss of 3.4 dB/cm for unclad waveguides and 0.97 dB/cm for waveguides clad with SiO2. We compared our experimental results with the Payne–Lacey model describing propagation dominated by sidewall scattering. We conclude that the relative increase in the refractive index of TeO2 reduces scattering sufficiently to account for the low propagation loss. These results, in combination with the promising optical properties of TeO2, provide a further step towards realizing compact, monolithic, and low-loss passive, nonlinear, and rare-earth-doped active integrated photonic devices on a silicon photonic platform.
Highlights
C-band and 0.8 dB/cm for the O-band of silicon wire waveguides have been reported for waveguides with a 440 nm core width, 220 nm core height, and 2 μm-thick SiO2 cladding layer defined by a high-resolution immersion lithography process [27]. While all of these approaches to improving Q factors in silicon microring resonator (MRR) are promising for different applications, they either suffer from performance trade-offs or add fabrication cost and complexity
We demonstrate a silicon MRR with a Q factor of 1.5 × 106 at 1550 nm, corresponding to a propagation loss of 0.42 dB/cm, fabricated with a standard foundry process, plus a low-temperature post-process deposition of a TeO2 cladding layer
2–Si hybrid mi6 previously to such that croring resonator with a 1.5 × 10 internal Q factor corresponding to a 0.42 dB/cm propagation loss
Summary
C-band and 0.8 dB/cm for the O-band of silicon wire waveguides have been reported for waveguides with a 440 nm core width, 220 nm core height, and 2 μm-thick SiO2 cladding layer defined by a high-resolution immersion lithography process [27] While all of these approaches to improving Q factors in silicon MRRs are promising for different applications, they either suffer from performance trade-offs (e.g., multi-mode operation, larger footprint, and/or significantly reduced FSR) or add fabrication cost and complexity. The unique site variability in the TeO2 glass matrix enables high rare-earth dopant solubility and leads to large emission bandwidths, motivating its application in integrated optical amplifiers and lasers [29,30,31], including the recent demonstration of a hybrid rare-earth laser directly on silicon with an internal quality factor of 5.6 × 105 [32] This low-loss platform has significant potential for linear, nonlinear, and active optical applications in silicon photonics
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