Abstract
A study of the sources and control of residual impurities in GaAs grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of source purity, growth temperature, and reactor pressure upon residual impurities incorporation are detailed. Far infrared photoconductivity and photoluminescence indicate that C, Si and Zn are the dominant residual impurities in undoped material. It is demonstrated that GaAs with total impurity concentrations as low as 5 × 10 14 cm -3, μ(77 K) = 125,000 cm 2/V · s, can be grown by MOCVD. The conditions for growing such material are detailed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
