Abstract
High-purity cubic GaN films have been successfully grown on a AlGaAs buffer layer by molecular beam epitaxy. A characteristic nitrided AlGaAs smooth faceted surface was observed. It was found that GaN epilayers grown on a nitrided Al 0.17Ga 0.83As buffer layer were epitaxial and contained only the cubic phase. No diffraction peaks associated with the hexagonal phase of GaN were observed by X-ray pole-figure measurements.
Published Version
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