High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

Abstract

High-purity cubic GaN films have been successfully grown on a AlGaAs buffer layer by molecular beam epitaxy. A characteristic nitrided AlGaAs smooth faceted surface was observed. It was found that GaN epilayers grown on a nitrided Al 0.17Ga 0.83As buffer layer were epitaxial and contained only the cubic phase. No diffraction peaks associated with the hexagonal phase of GaN were observed by X-ray pole-figure measurements.