Abstract
Seeded growth of GaN on 1 in sapphire/GaN templates by high-pressure solution method is presented. Five crystallization runs at the same growth conditions (temperatures, supercooling, nitrogen pressure, time) but different in geometry are described in details. The finite element calculation is used for modeling the convective transport in the liquid gallium. The stream lines, convectional flow velocity vectors and isotherm lines in liquid metal are determined based on experimentally measured temperatures in the crucible wall. The influence of the seed and the baffle for convection in liquid metal is analyzed in details.
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