Abstract
A low-temperature (∼250 °C) high-pressure oxidation technique is used for the thermal oxidation of gallium arsenide in an ambient of oxygen and water vapor. It is shown that a uniform and chemically stable oxide with high band-gap energy can be grown on GaAs by this process. The role of water vapor and oxygen is studied in detail to obtain information on the oxidation mechanism. The electrical characteristics and the composition of this oxide are presented to demonstrate its suitability for surface passivation and metal-oxide–semiconductor devices.
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