High pressure studies on topological insulator Bi[sub 2]Se[sub 3

Abstract

High pressure electrical resistivity measurements upto 7.5 GPa have been performed on single crystal of Bi2Se3 topological insulator to study the evolution of its transport properties. A progressive increase in pressure drives this system from metal to increasingly insulating behaviour indicating the suppression of bulk conductivity. In the pressure induced insulating regime, the resistivity exhibits two step increase which is separated by a shoulder. The shoulder temperature is seen to increases with pressure.