Abstract
Abstract Single crystals of CuInS2 having n-and p-type character were grown by chemical vapour transport technique and were characterised by XRD and temperature variation of resistivity. The bandgap Eg was determined from the optical absorption studies. The thermoelectric power (S) and a.c. resistivity (Rω) of both the n and p-type crystals were measured upto 8 GPa. From a.c. conductivity measurements, we deduce that the conduction in CuInS2 is dominated by the hopping mechanism.
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