High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration

Abstract

The electrical properties of metal–oxide–semiconductor devices based on GdOx obtained by high pressure sputtering on InP substrates are studied. In order to prevent damage of the semiconductor substrate, an optimized two-step sputtering procedure has been used for the high permittivity dielectric deposition. First, a thin metallic Gd film was sputtered using a metallic Gd target and a pure Ar plasma. Then, without extracting the sample from the system, the GdOx films were obtained by plasma oxidation using an Ar/O2 mixed atmosphere and reducing plasma power to minimize damage and interfacial regrowth. The resulting devices show fully functional capacitance curves. After forming gas annealing, the capacitors do not show interface regrowth up to a temperature of 500 °C and the gate leakage stays within reasonable limits, below 2 × 10−4 Acm−2 at a gate voltage of 1.5 V. In addition, the interface trap density remains roughly constant with annealing temperature up to 400 °C, in the low 1013 eV−1cm−2 range, decreasing for higher temperatures. At 550 °C, the trap density is very low, under the detection limit of the conductance technique, but the devices show a severe capacitance reduction.