Abstract
It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.
Highlights
Electronic devices prepared by GaN-on-GaN technology are still at the beginning of their road to commercialization
First GaN monocrystals of the highest structural quality were obtained by the high nitrogen pressure solution (HNPS) method [11]
They were grown from a solution of atomic nitrogen in liquid gallium (Ga) at temperature of the order of 1500 ◦ C and nitrogen (N2 ) pressure of 1 GPa
Summary
Electronic devices prepared by GaN-on-GaN technology are still at the beginning of their road to commercialization. One of the possible solutions is to anneal implanted GaN at much higher temperature but, at high nitrogen pressure. Such technology is called the ultra-high-pressure annealing (UHPA). First GaN monocrystals of the highest structural quality were obtained by the HNPS method [11] They were grown from a solution of atomic nitrogen in liquid gallium (Ga) at temperature of the order of 1500 ◦ C and nitrogen (N2 ) pressure of 1 GPa. If Ga is removed from such a system, it is possible to anneal any material in the temperature and pressure conditions described above. A summary is given at the end of this paper
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