Abstract
ABSTRACTNew method for identification of the kind of elastic stress-free crystal imperfections which are not visible by standard X-ray and electron microscopy methods was presented. The method is based on the high pressure annealing creating large stresses at defect sites,followed by X-ray topography. This method was applied in structural defects studies of high quality silicon single crystals and allowed to determine the composition and structure of precipitates in silicon.
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