Abstract
This paper reports the simulation of optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain of the order of ∼ 9000 /cm in the heterostructure can be achieved at the lasing wavelength ∼ 1.95 µm (SWIR region). The application of high pressure (2 and 5 GPa) on the structure shows that the gain as well as lasing wavelength both approach to higher values. Thus, the structure can be tuned externally by the application of high pressure.
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