Abstract
High pressure deuterium annealing was applied to nano-scale CMOS devices which has Plasma Nitride Oxidation (PNO) gate oxide. The annealing effect was characterized in terms of different sizes, charge pumping, hot carrier and NBTI stress, and \/f noise for the first time. The characteristics of NMOS were improved by the annealing. But PMOS has only improved NBTI characteristic. Devices with narrow channel width shown more significant effect than wide channel devices.
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