Abstract
A multifunction sensor based on bulk micromachining of silicon has been developed to measure dynamic change in pressure and temperature simultaneously. Boron doped polysilicon piezoresistors were placed on the silicon diaphragm in a full Wheatstone's bridge configuration employing standard microelectronics processes. Another single resistor has been placed on the chip but on the pressure non sensitive area of the chip for temperature sensing purpose. Over the temperature range 140 0 C, the pressure and temperature properties have been measured. For 200 Psi full scale pressure sensitivity is 0.30mV/Psi from 25 0 C to 140 0 C has been observed with temperature gradient of -0.35mV/ 0 C, with good linearity. The extra resistor which was placed outside the diaphragm acts as a temperature sensor with temperature gradient of about +0.70% 0 C -1 .
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