High precision machining of Si using a single mode fiber laser

Abstract

The advances in design, performance, cost reduction, and brightness for the modern Yb fiber laser have opened up the possibility of redefining the processing options of semiconductor materials at a wavelength of 1064nm. The usual laser of choice for Si processing is the 532, 355, or 266 nm DPSS system. The provision of a new MOPA high brightness Yb based fiber laser configuration has provided a range of pulse parameters (10-200 ns FWHM), peak powers approaching ~ 2G Wcm−2, pulse repetition rates up to 500 kHz. These processing parameters offer a broad range of material response characteristics. This paper provides a preliminary analysis of the response of Si to the new MOPA based Yb laser operating at maximum average power of 20W.The advances in design, performance, cost reduction, and brightness for the modern Yb fiber laser have opened up the possibility of redefining the processing options of semiconductor materials at a wavelength of 1064nm. The usual laser of choice for Si processing is the 532, 355, or 266 nm DPSS system. The provision of a new MOPA high brightness Yb based fiber laser configuration has provided a range of pulse parameters (10-200 ns FWHM), peak powers approaching ~ 2G Wcm−2, pulse repetition rates up to 500 kHz. These processing parameters offer a broad range of material response characteristics. This paper provides a preliminary analysis of the response of Si to the new MOPA based Yb laser operating at maximum average power of 20W.