Abstract
InGaAs/InP-modified uni-traveling carrier photodiodes with cliff layer were designed and fabricated for V-band (50-75 GHz) applications. The devices were flip-chip bonded on AlN submounts for efficient heat dissipation. A high-impedance transmission line was designed to compensate for the parasitic capacitance and enhance the bandwidth. Devices with 3-dB bandwidths of 50 and 65 GHz demonstrated high-output RF power of 20.3 and 15.9 dBm, respectively.
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