Abstract
Ultraviolet (UV) InGaN/AlGaN double-heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5mW and an emission wavelength of 371nm were developed. High-power UV LEDs are obtained using an InGaN active layer with a thickness of 400Å instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based LEDs.
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