Abstract
Terahertz (THz) pulses with a peak power of ∼2 kW were generated in a noncollinear phase-matched GaAs crystal at room temperature. Two 200 ns pulses from a dual-beam TEA CO2 laser were used for difference frequency mixing in the crystal. A comb of narrow lines (Δν/ν∼10−4) was obtained in the 0.5-3 THz range with a step of 40 GHz. By comparing the effective nonlinearity of GaSe with that of GaAs for THz generation, the electro-optic nonlinear coefficient for GaSe was measured to be deo=24.3±10% pm/V. Using simulations we show that a 1 kW THz pulse could be amplified by a factor of 2×104 to a 10 MW level in a 2 m long single-pass free-electron laser.
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