Abstract
We have newly developed a 350 μm long cavity GaAlAs laser with nonabsorbing mirror buried twin ridge substrate structure, in order to obtain highly reliable high power single mode operation. It is found that the long cavity stabilizes lateral mode at powers higher than conventional maximum values because the carrier density is reduced to well suppress spatial hole-burning effect. The fundamental spatial mode operation is confirmed up to 210 mW and the maximum output power as high as 380 mW is obtained. The lifetime at 100 and 200 mW at 25 °C are expected to be 170 000 and 24 000 h, respectively, from the aging test results.
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