High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography

Abstract

In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5°, the beam quality factor M2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.