Abstract
In this paper, an RF LDMOSFET is demonstrated with excellent RF performance. It achieves high power gain of 14.5 db at a high power of 130 W at 2.1 GHz. Its high efficiency and linearity make it highly desirable in many applications. A substrate dimension of 2 ml enables the best-in-class thermal stability. Low hot carrier injection (HCI) degradation, integrated electrostatic discharge (ESD) structures and gold metal ensure good long-term reliability.
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