High power semiconductor laser array with single-mode emission

Abstract

The semiconductor laser array with single-mode emission is presented in this paper. The 6-μm-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M 2 of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.