Abstract
The design and implementation of a short wavelength strain-compensated quantum cascade laser based on In0.72Ga0.28As/In0.52Al0.48As–AlAs on InP is presented. We demonstrate watt-level room temperature emission at 3.3 μm. Lasers operate in pulsed mode above 350 K. Threshold current densities of 3.6 kA/cm2 and slope efficiencies of more than 600 mW/A are observed at room temperature. The laser performance is comparable with Sb-containing quantum cascade lasers.
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