Abstract
High-power operation of AlGaAs multi-quantum-well laser diodes emitting near 730 nm is reported. 1000 h, reliable operation at a power of 1.0 W for 100 μm emission aperture and 500 μm cavity length devices has been demonstrated at room temperature. These devices have threshold current densities of 770 A/cm2 with the characteristic temperature coefficients of threshold current, T0, and external differential quantum efficiency, T1, of 152 and 167 K, respectively.
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