Abstract
A novel high-power rectifier using the BSIT (Bipolar mode Static Induction Transistor) operation has been demonstrated. In order to improve the reverse blocking capability of this diode, an ion implanted P-type channel structure is introduced. Device simulations have revealed that, as the tradeoff relationships between reverse blocking voltage, forward voltage drop, and reverse recovery time are considered, there exists an optimum set of the channel dosage and the channel width.
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