High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

Abstract

Polarization-insensitive 1.3 µm InGaAsP–InP multi-quantum-well (MQW) superluminescent diodes (SLDs) were grown by MOVPE. Both compressively-strained wells and tensile-strained wells were employed in the active region. The SLDs were fabricated into ridge waveguide structures with 7° tilted cavity and buried-window end facets. The two facets were coated with four layer anti-reflection TiO2/SiO2 films and residual facet reflectivity was found to be less than 0.02%. The SLDs exhibited up to 16.9 mW optical output power and less than 1 dB polarization dependence of output power with less than 0.2 dB optical spectrum modulation at 200 mA.