Abstract
High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (–2 dBm at 20 mA). Balanced and traveling-wave photodiodes of this type have bandwidths of 20 and 35 GHz, respectively.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Paper Title
Journal
Date
