Abstract
High-power type AlGaInP laser diodes (λL = 635 nm) with the current-blocking region near the facets have been successfully fabricated for the first time, by MOCVD using the (100) GaAs substrates with a misorientation of 5° towards the (100) direction. The maximum continuous wave output power was achieved with about 33 mW at 20°C. Fundamental transverse-mode operation was obtained up to 20 mW.
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