Abstract
High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9- mu m-wide ridge and 600- mu m-long cavity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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