Abstract
We present broad-area semiconductor lasers with a 100th-order high-order distributed Bragg reflection (HO-DBR) grating structure, fabricated with the conventional UV lithography techniques. Based on the finite-difference time-domain (FDTD) algorithm, a maximum output power of 10.5 W, emitting around 975 nm with a spectral width of less than 0.5 nm FWHM has been achieved. This method provides insights for reducing the manufacturing costs of the high-power narrow spectral width DBR lasers.
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