Abstract
Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers emitting at 2.05 µm have been grown by liquid phase epitaxy on GaSb substrates. For pulsed operation of 300 µm-wide broad stripe lasers, output power as high as 80 mW per facet and threshold current density as low as 1.7 kA/cm2 have been obtained for cavity lengths of 300 and 900 µm, respectively. Mesa-stripe lasers 200 µm long showed room temperature threshold current of 200 mA with a characteristic temperature T0 ≃ 115 K.
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