Abstract
Broad area lasers based on InAs-GaAs quantum dots formed by submonolayer deposition were fabricated. High modal gain of submonolayer quantum dots permits the use of broad-waveguide and highly doped design. Continuous wave output power of 6W limited by mirror damage and conversion efficiency of 58% were demonstrated at 20 °C. The characteristic temperature of 150 K was achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Microelectronics Journal
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
