Abstract
High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm 2. A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.
Published Version
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