High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

Abstract

Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm −2 and output powers up to 546 mW.