Abstract
High power and high speed surface emitting graded index separate confinement heterostructure (GRINSCH) LEDs with an InGaAs quantum well grown by metalorganic vapour phase epitaxy have been realized. The speed and the output power are affected by the thickness of the spacer layers separating the quantum well structure from the graded index layers and the growth sequence of the interface. A performance of 7.4 mW output power and 118 MHz speed, at 945 nm emitting wavelength, has been achieved when the spacer layer thickness is 50 Å with 30 s growth halts. The quantum and power efficiencies are 11% and 7.5%, respectively.
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