Abstract
We describe a high-performance 1.3-μm InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all-vapor-phase growth technology. Current confinement is provided by metalorganic vapor-phase growth of semi-insulating InP blocking layers. The laser has a small-signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single-frequency operation to output powers as high as 23 mW.
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