Abstract
High power semiconductor disk lasers (SDLs) were demonstrated based on the thermal management using pre-metalized diamond heat-spreader. The processing of pre-metallization using Cu-Sn alloy was developed. The resultant and influence of pre-metallization on the thermal performance of SDLs were investigated. It was found that the pre-metalized diamond heat-spreader was able to improve effectively not only the thermal resistance but also the bonding quality. 38% decrease on the thermal resistance of SDL was realized. The CW power exceeding 27 W, limited by the available pump power, was demonstrated.
Highlights
Semiconductor disk lasers (SDLs) [1]–[3], known as optical pumped semiconductor vertical external cavity surface-emitting lasers (OPS-vertical external-cavity surface-emitting laser (VECSEL)) [4]–[7], are very attractive for high-power and high beam quality operation
Semiconductor disk lasers (SDLs) [1]–[3], known as optical pumped semiconductor vertical external cavity surface-emitting lasers (OPS-VECSELs) [4]–[7], are very attractive for high-power and high beam quality operation. This type laser is quite similar with the diode-pumped solid-state lasers but the gain medium is semiconductor quantum-wells (QWs) [3]–[7], which takes the advantages of semiconductor lasers, such as the versatile wavelength, wide-pumping bandwidth, and efficient pump absorption
We proposed a pre-metallization method of diamond and demonstrated the high power continuous wave (CW) operation of SDL based on the pre-metalized diamond heat-spreader
Summary
Semiconductor disk lasers (SDLs) [1]–[3], known as optical pumped semiconductor vertical external cavity surface-emitting lasers (OPS-VECSELs) [4]–[7], are very attractive for high-power and high beam quality operation. This type laser is quite similar with the diode-pumped solid-state lasers but the gain medium is semiconductor quantum-wells (QWs) [3]–[7], which takes the advantages of semiconductor lasers, such as the versatile wavelength, wide-pumping bandwidth, and efficient pump absorption. Overheating leads to the thermalization of carriers in QWs and the misalignment between the QW positions and the anti-nodes of resonant periodic gain
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