Abstract
We present high-power GaN-based blue superluminescent diodes (SLDs) with bend waveguides. The devices were grown on a c-plane GaN free-standing substrate by metal–organic chemical vapor deposition. Studies on waveguide design were conducted to increase the output power of SLDs. Low spectral modulation had been obtained by optimizing the bend angle of the ridge waveguide. An output power as high as 510 mW had been obtained for SLDs emitting at 441 nm with a full width at half maximum of 4.4 nm.
Highlights
In this work, GaN-based blue SLDs with an ITO upper cladding layer had been designed and fabricated
Low spectral modulation had been obtained by optimizing the bend angle of the ridge waveguide
An output power as high as 510 mW had been obtained for SLDs emitting at 441 nm with a full width at half maximum of 4.4 nm
Summary
GaN-based blue SLDs with an ITO upper cladding layer had been designed and fabricated. Studies on waveguide design were conducted to increase the output power of SLDs. Low spectral modulation had been obtained by optimizing the bend angle of the ridge waveguide.
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