Abstract
High-power broadband superluminescent diodes (SLDs) have been studied for spectrum-sliced multiwavelength light sources for use in wavelength division multiplexing systems. We present the design and fabrication of high-power broadband GaInAsP/InP strained quantum well SLDs with a tapered active region emitting in a 1.55 µm wavelength band. The fabricated device exhibited the high-power operation of over 1 W. Also, the spectral width has been increased to over 60 nm by using chirped multiquantum wells which have different well thicknesses.
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