High Power GaAs FET Solid State Amplifier (32 watt) Development Program

Abstract

A High Power Solid State Amplifier (HPSSA) using Gallium Arsenide Field Effect Transistors (GaAs FETs) has been developed to compete with the 40 watt TWTAs on the Defense Satellite Communications System III (DSCS III), the latest generation of United States Military Communications Satellites. The Engineering Model of this state-of-the-art component demonstrates that it is competitive with the 40 watt TWTA from an efficiency and performance standpoint, and is significantly more reliable. Specific typical data and a summary of overall component performance is presented. Accelerated GaAs FET life data obtained and used in a MIL-HDBK analysis shows that the reliability of the HPSSA will be substantially greater than projected TWTA reliabilities. The EM amplifier has been successfully tested to DSCS III qualification level, hard mechanical environment tests, proving that it is capable of being flight qualified. With this development, High Power GaAs FET Solid State Amplifiers at the 32-40 watt level are shown to be ready to be incorporated onto high reliability space applications.