High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

Abstract

Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm −2 and output powers over 900 mW.