Abstract
We report a high-power single-mode InP-based 2 μm distributed feedback (DFB) laser with a second-order buried grating and corrugated sidewalls. A second-order semiconductor grating is used for in-plane feedback and vertical out-coupling. The corrugated sidewalls are used to eliminate higher-order transverse modes. For the DFB laser with a 2 mm long cavity and 15 μm wide ridge, the maximum continuous-wave edge-emitting and surface-emitting single-mode powers at 300 K are up to 81 and 42 mW, respectively. A single-lobed far-field radiation pattern with a low divergence angle of approximately 8.6° is achieved by a device with a ridge width of 15 μm. The single-longitudinal-mode emission wavelength of the fabricated laser can be adjusted from 2003.8 nm at 288 K to 2006.9 nm at 313 K without any mode hopping. Robust single-mode emission with a side-mode suppression ratio of 30 dB is achieved under all injection currents and temperature conditions.
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