High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Abstract

Data are presented describing continuous (cw) room-temperature laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) phase-locked arrays. The ten-stripe arrays have 3 μm emitters, with emitter to emitter spacing of 4 μm, and are patterned onto the QWH crystal using a self-aligned Si-O impurity-induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across ∼1 μm). The coupled stripe QWH lasers exhibit narrow twin-lobed far-field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (∼75 mA) to over 280 mW (both facets, no optical coatings).