Abstract
The attainment of a high power, diffraction limited output from semiconductor laser arrays is currently a subject of great interest for many applications such as increasing optical fiber launch efficiency and improvement of solid state laser pumping. The output from a single stripe, single mode semiconductor laser is essentially diffraction limited but power output from these devices is limited due to problems with dissipation of heat from the lasing region, the current highest cw operating power being 100 mW. Diode laser arrays and bars present a solution to the problem of higher output powers but their output is generally far from diffraction limited.
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