Abstract
We report on a high-performance intermediate band solar cell (IBSC) based on Cr-doped ZnTe (ZnTe:Cr) fabricated using a pulsed laser deposition (PLD) method. Chromium (Cr) was uniformly distributed in the ZnTe:Cr thin film with an atomic concentration of about 3.5%, and the ZnTe:Cr thin film showed p-type electrical conductivity. The ZnTe:Cr thin film had higher absorption coefficients than those of undoped ZnTe films in the photon energy range below band gap of ZnTe (2.2eV). The enhanced absorption coefficients of the ZnTe:Cr thin film were attributed to the photoionization energy between Cr2+ and Cr+ (Cr2+⇌ Cr+), which acted as the IB to absorb photons below the bandgap of ZnTe (2.2eV). Illumination with an AM 1.5G solar spectrum on the ZnTe:Cr IBSC generated a large short circuit current of 21.18mA/cm2, an open circuit voltage of 0.48V, and a fill factor of 0.58, yielding a power conversion efficiency (PCE) of 5.9%, the highest reported PCE in an IBSC based on impurity-doped ZnTe.
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