Abstract
The article presents a novel design of a microwave chaotic oscillator. The oscillator contains an inertial converter for the nonlinear amplifier output signal that modulates the supply voltage of the transistor. When the inertia of the converter becomes less than 0.06, the oscillator demonstrates chaotic behavior. We present an experimental model of a chaotic oscillator based on a high power transistor 2T982A-2. The inertial converter circuit contains a diode that perform half-wave conversion of a part of the output signal and a RC circuit with a time constant equal to 0.05 of the duration of an oscillation at the central frequency of the oscillator. The output signal of the inertial converter has been applied to the emitter power supply circuit of the transistor. Modulation of the supply voltage caused the output signal of the oscillator to become a sequence of non-repeating oscillation trains with a random duration and initial phase. The frequency band of the generated chaos with an uneven power spectrum of 4 dB was in a range from 3.1 to 3.3 GHz with an integrated power of 1.2 W. The averaged spectral density of noise oscillations was 6 10-3 W / MHz. Efficiency of the oscillator was 15%.
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More From: Electronic engineering Series 2 Semiconductor devices
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