Abstract
A new structure for an InP-based ridge-waveguide laser is demonstrated. It has a reverse-trapezoid-ridge shape that offers reduced threshold current and smaller series resistance suitable for wide-temperature-range and high power operations. A 1.3 μm strained InGaAsP-InP MQW laser with the new ridge structure demonstrated over 200 mW output under a 440 mA injected current. Low threshold (<25 mA) and high efficiency (>0.3 W/A) operation was also achieved under 90/spl deg/C for 1.53 μm strained MQW lasers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
