High power and high efficiency operation of Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers (λ ≃ 0.98 µm)

Abstract

High power and high quantum efficiency Al-free InGaAs/ GaInAsP/GaInP GRINSCH SQW lasers emitting at 0.98 μm are reported. A CW output power as high as 580mW and single lateral mode power up to 280mW were achieved for the Al-free ridge waveguide lasers at room temperature. The lasers exhibited a high internal quantum efficiency of 99% and low internal waveguide loss of 3.2cm -1 . A high characteristic temperature of 217 K and low threshold current density of 109 A/cm 2 were also obtained. The results are the best obtained for Al-free 0.98 μm pumping lasers